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| SI7900AEDN New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.026 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V 0.036 @ VGS = 1.8 V ID (A) 8.5 8 7 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakr Package - Low-Thermal Resistance, RthJC - Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion Batteries PowerPAK 1212-8 D D 3.30 mm S1 1 2 G1 3 S2 3.30 mm 2.6 kW G1 G2 2.6 kW G2 4 D 8 7 D 6 D 5 D Bottom View Ordering Information: SI7900AEDN-T1 N-Channel S1 N-Channel S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 8.5 6.4 30 2.9 3.1 1.6 Steady State Unit V 6 4.3 A 1.4 1.5 0.79 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72287 S-31418--Rev. A, 07-Jun-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 32 65 2.2 Maximum 40 82 2.8 Unit _C/W C/W 1 SI7900AEDN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.5 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 8 A VGS = 1.8 V, ID = 7 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 8.5 A IS = 2.9 A, VGS = 0 V 20 0.020 0.022 0.026 25 0.65 1.1 0.026 0.030 0.036 S V W 0.40 0.9 "1 "10 1 20 V mA mA mA A Symbol Test Condition Min Typ Max Unit Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 10.5 1.9 1.8 0.85 1.3 8.6 4.2 1.25 2.0 13 6.5 ms 16 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Gate-Current vs. Gate-Source Voltage 10,000 1,000 I GSS - Gate Current (mA) 100 10 1 0.1 0.01 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage I GSS - Gate Current (mA) 8 6 TJ = 150_C 4 2 TJ = 25_C 0 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Document Number: 72287 S-31418--Rev. A, 07-Jun-03 www.vishay.com 2 SI7900AEDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 25 VGS = 5 thru 2 V I D - Drain Current (A) I D - Drain Current (A) 20 15 10 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 20 15 10 5 0 0.0 125_C Vishay Siliconix Output Characteristics 30 25 Transfer Characteristics TC = - 55_C 25_C 1.5 V 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 0.06 On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.5 A Gate Charge r DS(on) - On-Resistance ( W ) 0.05 4 0.04 3 0.03 VGS = 1.8 V VGS = 2.5 V 2 0.02 VGS = 4.5 V 1 0.01 0 5 10 15 20 25 30 ID - Drain Current (A) 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) 1.6 On-Resistance vs. Junction Temperature 20 VGS = 4.5 V ID = 8.5 A I S - Source Current (A) 10 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 1.4 1.2 TJ = 150_C 1 TJ = 25_C 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 0.1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com TJ - Junction Temperature (_C) Document Number: 72287 S-31418--Rev. A, 07-Jun-03 3 SI7900AEDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.05 On-Resistance vs. Gate-to-Source Voltage 0.4 Threshold Voltage ID = 250 mA r DS(on) - On-Resistance ( W ) 0.04 V GS(th) Variance (V) 0.2 0.03 ID = 8.5 A - 0.0 0.02 - 0.2 0.01 - 0.4 0.00 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) - 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (_C) Single Pulse Power, Junction-to-Ambient 200 100 Limited by rDS(on) Safe Operating Area, Junction-to-Case 160 10 Power (W) 120 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 80 40 0.1 TC = 25_C Single Pulse 1s 10 s dc 0 0.001 0.01 0.1 Time (sec) 1 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72287 S-31418--Rev. A, 07-Jun-03 www.vishay.com 4 SI7900AEDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Square Wave Pulse Duration (sec) 0.1 1 Document Number: 72287 S-31418--Rev. A, 07-Jun-03 www.vishay.com 5 |
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